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Dielectric function of GaAs including the effects of free carriers. The inset shows scanning electron micrograph of extraordinary transmission grating structure. The grating period is and the individual hole diameters are designed for . Fabrication widens the actual device hole diameter to .
Transmission for highly doped sample as a function of incident angle for angles from 0° (top trace) to 32° (bottom trace) in 4° increments. (a) Transmission spectra for light polarized orthogonal to the axis of rotation. (b) Transmission spectra for light polarized parallel to the axis of rotation. The dashed lines are added as aids for visualizing the peak splitting in both plots and follow the peak structure of the spectra. The surface plasmon modes are labeled above the 0° spectra for both (a) and (b). Transmission spectra as a function of incident angle for the more lightly doped samples show identical structure, shifted slightly in wave number.
Polarized transmission spectra for all three samples at 0° incident angle, focusing on the fundamental peak. The transmission peaks show a distinct shift as the doping of the epitaxial layer is increased. The transmission peak positions for each sample are 7954 (doped ): ; 7947 (doped ): ; 7952 (doped ): . The inset shows the peak structure for sample 7954 as a function of the focusing optics used (using unpolarized light). As the focal length of the lens increases, from to (collimated light), the width of the transmission peak decrease from .
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