Full text loading...
(Top) AFM micrograph of NbN meander line realized by local anodization in the regime of full oxidation of a -thick film. The brightest regions are the patterned oxide protrusions. The stripes visible on the top right of the image are hight atomic steps, replicated from the underlying sapphire substrate. (Bottom right) Line profile of series oxide protrusions showing a 0.25 aspect ratio. (Bottom left) General AFM micrograph of a typical sample showing the interdigitated pattern of oxide lines.
Low frequency voltage-biased characteristics of a typical AFM-made SSPD device measured at . The hot-spot plateau is at , one third of the value of the critical current. Inset: Oscilloscope time trace of a single count event, measured in the same condition with high frequency lines (the amplification of the rf has been substracted).
Counting rates vs the bias current on an AFM-made SSPD measured at , for different photon sources as a function of the normalized bias current. (From left to right) Irradiation sources are IR laser (two-photon response), blue LED, and red LED (single-photon response). (On far right) Dark counts for the same measuring conditions.
(Top) Detector counting rates as a function of the sources attenuation for blue, red, and infrared irradiation and (bottom) at two different bias currents for blue irradiation.
Article metrics loading...