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Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature
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10.1063/1.2430917
/content/aip/journal/apl/90/2/10.1063/1.2430917
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/2/10.1063/1.2430917
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Carrier concentration and mobility of the amorphous indium zinc oxides thin film using targets as a function of the ratio in the working pressure of .

Image of FIG. 2.
FIG. 2.

(Color online) (a) Schematic and (b) optical transmittance of the transparent amorphous indium zinc oxide thin-film transistor.

Image of FIG. 3.
FIG. 3.

(Color online) Drain current-drain voltage characteristics of transparent thin-film transistor based on amorphous indium zinc oxides.

Image of FIG. 4.
FIG. 4.

(Color online) Source-to-drain current as a function of gate voltage at a fixed drain voltage of .

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/content/aip/journal/apl/90/2/10.1063/1.2430917
2007-01-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/2/10.1063/1.2430917
10.1063/1.2430917
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