1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Change in electrical resistance and thermal stability of nitrogen incorporated films
Rent:
Rent this article for
USD
10.1063/1.2431462
/content/aip/journal/apl/90/2/10.1063/1.2431462
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/2/10.1063/1.2431462
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Changes in sheet resistance in (GST) and nitrogen incorporated (NGST) films as a function of annealing temperature.

Image of FIG. 2.
FIG. 2.

Impedance measurement of nitrogen incorporated (NGST) films, annealed at a temperature of . (a) The change in the imaginary part of the complex impedance as a function of ac frequency and (b) the complex impedance diagram of nitrogen incorporated films.

Image of FIG. 3.
FIG. 3.

Extinction coefficients of (GST) and nitrogen incorporated (NGST) films with different nitrogen contents: (a) as grown and (b) annealed at a temperature of .

Image of FIG. 4.
FIG. 4.

Near edge x-ray absorption data of nitrogen incorporated (NGST) films: (a) as grown and (b) annealed at a temperature of . The observation of a sharp peak at a photon energy of is resolved to five peaks in a step of , as shown in the inset of (a), which is a typical feature of molecular state.

Loading

Article metrics loading...

/content/aip/journal/apl/90/2/10.1063/1.2431462
2007-01-09
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Change in electrical resistance and thermal stability of nitrogen incorporated Ge2Sb2Te5 films
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/2/10.1063/1.2431462
10.1063/1.2431462
SEARCH_EXPAND_ITEM