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A Study of compressively strained metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric
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10.1063/1.2431464
/content/aip/journal/apl/90/2/10.1063/1.2431464
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/2/10.1063/1.2431464
/content/aip/journal/apl/90/2/10.1063/1.2431464
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/content/aip/journal/apl/90/2/10.1063/1.2431464
2007-01-09
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/2/10.1063/1.2431464
10.1063/1.2431464
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