1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
A Study of compressively strained metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric
Rent:
Rent this article for
USD
10.1063/1.2431464
/content/aip/journal/apl/90/2/10.1063/1.2431464
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/2/10.1063/1.2431464
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) XPS data of (a) Ge and (b) Si spectra for DHF-cleaned substrate [curve (i)] and DHF-cleaned substrate with subsequent deposition of a layer of HfAlO film without [curve (ii)] or with [curve (iii)] PDA at for . The inset shows Al spectrum of the substrate with a thin layer of HfAlO film without PDA [curve (ii)].

Image of FIG. 2.
FIG. 2.

(Color online) XPS data of (a) Ge and (b) Si spectra for DHF-cleaned substrate [curve (i)], DHF-cleaned substrate with surface nitridation treatment [curve (ii)], and DHF-cleaned substrate with surface nitridation treatment and subsequent deposition of a layer of HfAlO film without [curve (iii)] or with [curve (iv)] PDA at for . The inset shows N spectrum of the substrate with surface nitridation and a thin layer of HfAlO film without PDA [curve (iii)].

Image of FIG. 3.
FIG. 3.

characteristics of the MOS capacitor without (solid line with open square) and with (solid line with open circle) RTN prior to HfAlO deposition.

Image of FIG. 4.
FIG. 4.

(Color online) EOT dependence of gate leakage currents at for the MOS capacitor without (solid triangles) or with (solid squares) RTN prior to HfAlO deposition. The inset shows dependence of EOT on HfAlO physical thickness for both samples.

Loading

Article metrics loading...

/content/aip/journal/apl/90/2/10.1063/1.2431464
2007-01-09
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/2/10.1063/1.2431464
10.1063/1.2431464
SEARCH_EXPAND_ITEM