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Optical gain in quantum well structures with embedded AlGaN layer
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10.1063/1.2431477
/content/aip/journal/apl/90/2/10.1063/1.2431477
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/2/10.1063/1.2431477
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Potential profiles and the wave functions of the first conduction subband (C1) and the first valence subband (HH1) at zone center for the ground state of wurtzite (a) single QW structure, (b) double QW structure with AlGaN layer at the well center, and (c) double QW structure with AlGaN layer deviated from the well center.

Image of FIG. 2.
FIG. 2.

Calculated C1-HH1 PL transition energies and comparison with experimental data as functions of well width and AlGaN layer thickness for wurtzite (a) single QW structure and (b) double QW structure with a AlGaN layer.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Valence band structures and (b) optical matrix elements as a function of the in-plane wave vector for wurtzite single QW structure and a double QW structure with a AlGaN layer.

Image of FIG. 4.
FIG. 4.

(Color online) Optical gain spectra at and for wurtzite single QW structure and a double QW structure with a AlGaN layer.

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/content/aip/journal/apl/90/2/10.1063/1.2431477
2007-01-11
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical gain in InGaN∕GaN quantum well structures with embedded AlGaN δ layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/2/10.1063/1.2431477
10.1063/1.2431477
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