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Erratum: “Kinetic study of Al-mole fraction in grown on -plane sapphire and AlN bulk substrates by metal-organic vapor-phase epitaxy” [Appl. Phys. Lett.90, 051104 (2007)]
1.Y. A. Xi, K. X. Chen, F. W. Mont, J. K. Kim, W. Lee, E. F. Schubert, W. Liu, X. Li, and J. A. Smart, Appl. Phys. Lett.90, 051104 (2007).
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