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Strain relaxation and critical temperature in epitaxial ferroelectric thin films
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10.1063/1.2740171
/content/aip/journal/apl/90/20/10.1063/1.2740171
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/20/10.1063/1.2740171
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Room temperature thickness dependence of (∎) and (▴) lattice parameters for PZT thin films. The continuous lines are guides for the eyes, while the dashed lines are the bulk values. (b) Room temperature in-plane film-substrate separation vs inverse of the thickness. The line is a fit to the data for strain relaxation via misfit dislocations.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Rocking curves ( scans) around the (001) reflection for the Nb-STO substrate and PZT films of different thicknesses. (b) Reciprocal space map around the (103) reflection of a PZT thick film and Nb-STO substrate. The alignment of the peaks along demonstrates the coherent growth of the PZT film on the Nb-STO substrate.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Evolution of the lattice parameter for the Nb-STO substrate (∎) and of the [▴ measured from (103) reflection and ⋆ measured from (001) reflection] and [● from (103) reflection] lattice parameters of a thick PZT film with temperature. The structural phase transition occurs around . (b) Structural transition temperatures vs thickness for the different PZT thin films. The dashed line shows the bulk . (c) Intensity of scans around the (001) PZT reflection as a function of temperature for the thick film.

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/content/aip/journal/apl/90/20/10.1063/1.2740171
2007-05-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain relaxation and critical temperature in epitaxial ferroelectric Pb(Zr0.20Ti0.80)O3 thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/20/10.1063/1.2740171
10.1063/1.2740171
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