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Photoconductivity decay curves measured for -thick epilayers grown at a ratio of (a) 0.9 and (b) 1.1. The net donor concentration is for both samples. Trap ( center) concentration is for the sample grown at a ratio of 0.9, and for the sample grown at a ratio of 1.1, respectively. The illumination intensity for the measurement is from .
Relation between the inverse of the carrier lifetime and the concentration measured with an illumination intensity of . All the samples used for this experiment are as-grown epilayers with a thickness of . Based on the model expressed by Eq. (1), the experimental data are fitted. The fitted result is shown by a solid line for , and two broken lines for and , respectively.
(Color online) (a) Fluence of electron irradiation and distribution of concentration in a -thick epilayer selectively irradiated with a Cu mask. Electron irradiation was performed onto the sample grown at a ratio of 0.9 (donor concentration: ). (b) Maps of carrier lifetimes in the electron-irradiated sample annealed at for an illumination intensity of .
Relation between the inverse of the carrier lifetime and the concentration in as-grown (엯,●) and electron-irradiated epilayers annealed at (▵,▴) and at (◻,∎) for illumination intensities of (●,▴,∎) and (엯,▵,◻).
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