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In situ XPS spectra after annealing the metal-face substrates under ultrahigh vacuum conditions at RT, , , and .
RHEED images for (a) as-received metal-face , (b) annealed metal-face , (c) as-received O-face , and (d) annealed O-face .
(Color online) RHEED images from GaN grown on metal-face at (a) , (b) , and (c) RT. Images from GaN grown on O-face at (d) , (e) , and (f) RT. (g) EBSD pole figure of the direction for a GaN film grown on metal-face at RT.
(Color online) (a) Growth temperature dependence of the interfacial layer thickness between the GaN films and the metal-face substrates. (b) The GIXR curve for the RT-grown GaN on the metal-face . The dots and the solid line indicate experimental data and the theoretical fitting curve based on the Fresnel equation, respectively.
(Color online) (a) Growth temperature dependence of the rms values of the AFM surface images of GaN grown on the metal-face substrates. (b) An AFM image of the RT-grown GaN films.
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