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Low temperature epitaxial growth of GaN films on substrates
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View: Figures


Image of FIG. 1.
FIG. 1.

In situ XPS spectra after annealing the metal-face substrates under ultrahigh vacuum conditions at RT, , , and .

Image of FIG. 2.
FIG. 2.

RHEED images for (a) as-received metal-face , (b) annealed metal-face , (c) as-received O-face , and (d) annealed O-face .

Image of FIG. 3.
FIG. 3.

(Color online) RHEED images from GaN grown on metal-face at (a) , (b) , and (c) RT. Images from GaN grown on O-face at (d) , (e) , and (f) RT. (g) EBSD pole figure of the direction for a GaN film grown on metal-face at RT.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Growth temperature dependence of the interfacial layer thickness between the GaN films and the metal-face substrates. (b) The GIXR curve for the RT-grown GaN on the metal-face . The dots and the solid line indicate experimental data and the theoretical fitting curve based on the Fresnel equation, respectively.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Growth temperature dependence of the rms values of the AFM surface images of GaN grown on the metal-face substrates. (b) An AFM image of the RT-grown GaN films.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low temperature epitaxial growth of GaN films on LiGaO2 substrates