1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Mechanism for persistent hexagonal island formation in AlN buffer layer during growth on Si (111) by plasma-assisted molecular beam epitaxy
Rent:
Rent this article for
USD
10.1063/1.2741054
/content/aip/journal/apl/90/21/10.1063/1.2741054
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2741054
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM images showing the surface morphology of AlN layer of (a) and (b) in thickness by the interrupted method.

Image of FIG. 2.
FIG. 2.

(a) TEM dark-field image and (b) energy-filtered transmission electron microscopy elemental maps of the AlN layer for the film thickness of .

Image of FIG. 3.
FIG. 3.

TEM cross sectional dark-field images of the AlN layer for the film thickness of taken with (a) and (b) .

Image of FIG. 4.
FIG. 4.

Room temperature micro-Raman spectrum of the thick AlN film with a spectrum from a standard Si substrate for calibration.

Loading

Article metrics loading...

/content/aip/journal/apl/90/21/10.1063/1.2741054
2007-05-21
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanism for persistent hexagonal island formation in AlN buffer layer during growth on Si (111) by plasma-assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2741054
10.1063/1.2741054
SEARCH_EXPAND_ITEM