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Mechanism for persistent hexagonal island formation in AlN buffer layer during growth on Si (111) by plasma-assisted molecular beam epitaxy
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10.1063/1.2741054
/content/aip/journal/apl/90/21/10.1063/1.2741054
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2741054
/content/aip/journal/apl/90/21/10.1063/1.2741054
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/content/aip/journal/apl/90/21/10.1063/1.2741054
2007-05-21
2014-12-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanism for persistent hexagonal island formation in AlN buffer layer during growth on Si (111) by plasma-assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2741054
10.1063/1.2741054
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