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Bias-dependent contact resistance in rubrene single-crystal field-effect transistors
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10.1063/1.2741411
/content/aip/journal/apl/90/21/10.1063/1.2741411
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2741411
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) curves for a contact-dominated FET ( for four different gate voltages, , , , and ) showing nonlinear behavior, different from the usual FET characteristic reported in the inset (shown in the lower inset from measurements on long channel device). Top left inset: Optical microscope image of one of our devices (the white bar is long).

Image of FIG. 2.
FIG. 2.

(Color online) (a) Differential conductance normalized to the crystal width measured on FETs with different metal electrodes. (b) Differential conductance for two different short-channel gold-contacted FETs. (c) Histogram showing the spread in contact resistance for Au electrodes.

Image of FIG. 3.
FIG. 3.

(Color online) Normalized differential conductance for eight different FETs with Ni electrodes (open symbols) exhibiting reproducible behavior. The continuous line is a plot of the differential conductance of two Schottky diodes in series obtained from Eq. (2). Inset: Histogram showing the spread in contact resistance for Ni electrodes.

Image of FIG. 4.
FIG. 4.

(Color online) Normalized differential conductance for ten different FETs with Cu electrodes (open symbols) exhibiting reproducible behavior. The continuous line is a plot of the differential conductance of two Schottky diodes in series obtained from Eq. (2). Inset: Histogram showing the spread in contact resistance for Cu electrodes.

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/content/aip/journal/apl/90/21/10.1063/1.2741411
2007-05-21
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bias-dependent contact resistance in rubrene single-crystal field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2741411
10.1063/1.2741411
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