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High-performance bottom-contact devices based on an air-stable -type organic semiconductor -bis (4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide
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10.1063/1.2741414
/content/aip/journal/apl/90/21/10.1063/1.2741414
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2741414

Figures

Image of FIG. 1.
FIG. 1.

Chemical structures of (a) and (b) .

Image of FIG. 2.
FIG. 2.

Schematic diagram of bottom-contact device. .

Image of FIG. 3.
FIG. 3.

Output current decay in (●) and OTFTs. Bottom-contact devices were stressed with a fixed voltage for a total of in air.

Image of FIG. 4.
FIG. 4.

(Color online) AFM images of (a) and (b) were thermally deposited onto the surface.

Image of FIG. 5.
FIG. 5.

Transfer curves show gate bias stress before and after: electrical characteristics of .

Image of FIG. 6.
FIG. 6.

Transfer curves show gate bias stress before and after: electrical characteristics of .

Tables

Generic image for table
Table I.

Electrical characteristics of bottom-contact devices with the two semiconductors .

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/content/aip/journal/apl/90/21/10.1063/1.2741414
2007-05-21
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance bottom-contact devices based on an air-stable n-type organic semiconductor N,N-bis (4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2741414
10.1063/1.2741414
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