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High-performance bottom-contact devices based on an air-stable -type organic semiconductor -bis (4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide
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10.1063/1.2741414
/content/aip/journal/apl/90/21/10.1063/1.2741414
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2741414
/content/aip/journal/apl/90/21/10.1063/1.2741414
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/content/aip/journal/apl/90/21/10.1063/1.2741414
2007-05-21
2014-07-14
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance bottom-contact devices based on an air-stable n-type organic semiconductor N,N-bis (4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2741414
10.1063/1.2741414
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