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Schematic diagrams and corresponding potential profiles of different structures based on type-II quantum dot. In structure II the layer is included, while in structure III the InGaP (lattice matched to GaAs) layers are included.
Electron and hole ground state for QDs with struture I. [(a) and (b)] Electron and hole probability densities and its contour map for and ; [(c)–(f)] hole contour maps for QDs with different dimensions.
Contour maps of the hole ground state. Panels (a)–(d) correspond to structure II, while panel (e) to structure III.
The electron-hole wave-function overlap and the activation energy for different QDs. The radius and the height of the QDs is given in nanometer. The structures roman number correspond to that one shown in Fig. 1.
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