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Suppression of quantum dot decomposition by the incorporation of a GaAsSb capping layer
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10.1063/1.2741608
/content/aip/journal/apl/90/21/10.1063/1.2741608
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2741608
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Filled state topography image of an InAs QD capped with GaAsSb . The bright spots are Sb atoms in the As matrix. The white circles and the dark feature are cleavage induced defects.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Topography image of the GaAsSb capping layer . The bright spots are Sb atoms in the As matrix. Sb segregation into the GaAs layer is clearly observed. (b) Sb concentration profile in the capping layer obtained by counting individual Sb atoms. (c) Measured (solid line) and calculated (dotted line) outward relaxation profiles of the GaAsSb capping layer. A thick layer [as measured from (a)] with a 25% Sb composition was used in the calculation.

Image of FIG. 3.
FIG. 3.

(Color online) Measured (solid line) and calculated (dotted line) outward relaxation profiles through the center of a GaAsSb-capped QD. The inset shows the QD In distribution used in the calculation.

Image of FIG. 4.
FIG. 4.

(Color online) Filled state topography images of two QDs capped with (a) GaAsSb and (b) GaAs . The white circles and the dark features are cleavage induced defects.

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/content/aip/journal/apl/90/21/10.1063/1.2741608
2007-05-23
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suppression of InAs∕GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2741608
10.1063/1.2741608
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