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Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high- oxide/tungsten nitride gate stacks
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10.1063/1.2741609
/content/aip/journal/apl/90/21/10.1063/1.2741609
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2741609
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of a high- oxide/WN gate stack with a nitride interlayer (b) Cross-sectional TEM image of gate dielectric stack on Ge. There is no evidence of a low- interlayer formation between Ge and .

Image of FIG. 2.
FIG. 2.

(Color online) curves of a MOS capacitor with an EOT of . Inset shows the corresponding leakage current density curve as a function of .

Image of FIG. 3.
FIG. 3.

(a) Quasistatic and high frequency curves of a MOS capacitor (b) values extracted from the curves in (a) compared to those extracted by the frequency dependent conductance method.

Image of FIG. 4.
FIG. 4.

Source current vs gate voltage for -channel MOSFET with gate stack and -channel MOSFET with gate stack. The gate length was for both devices. The current was measured at the source to prevent the characteristics from being affected by drain junction leakage to the substrate.

Image of FIG. 5.
FIG. 5.

Effective carrier mobility of -channel and -channel Ge MOSFETs. Mobility was extracted from data shown in Fig. 4 and corresponding split data.

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/content/aip/journal/apl/90/21/10.1063/1.2741609
2007-05-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2741609
10.1063/1.2741609
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