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(a) Schematic diagram of a high- oxide/WN gate stack with a nitride interlayer (b) Cross-sectional TEM image of gate dielectric stack on Ge. There is no evidence of a low- interlayer formation between Ge and .
(Color online) curves of a MOS capacitor with an EOT of . Inset shows the corresponding leakage current density curve as a function of .
(a) Quasistatic and high frequency curves of a MOS capacitor (b) values extracted from the curves in (a) compared to those extracted by the frequency dependent conductance method.
Source current vs gate voltage for -channel MOSFET with gate stack and -channel MOSFET with gate stack. The gate length was for both devices. The current was measured at the source to prevent the characteristics from being affected by drain junction leakage to the substrate.
Effective carrier mobility of -channel and -channel Ge MOSFETs. Mobility was extracted from data shown in Fig. 4 and corresponding split data.
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