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Observation of cross-sectional electric field for GaN-based field effect transistor with field-modulating plate
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10.1063/1.2742288
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    Affiliations:
    1 Research and Development Association for Future Electron Devices, c/o NEC Corporation, 2-9-1 Seiran, Otsu, Shiga 520-0833, Japan
    2 Research and Development Association for Future Electron Devices, c/o Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
    3 Research Organization of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
    a) Electronic mail: wake@da.jp.nec.com
    b) Present address: Nano Electronics Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu, Shiga 520-0833, Japan.
    c) Present address: Yokohama Research and Development Laboratories, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan.
    d) Present address: The Organization for the Promotion of the COE Program, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan.
    Appl. Phys. Lett. 90, 213504 (2007); http://dx.doi.org/10.1063/1.2742288
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/content/aip/journal/apl/90/21/10.1063/1.2742288
2007-05-21
2014-09-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of cross-sectional electric field for GaN-based field effect transistor with field-modulating plate
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2742288
10.1063/1.2742288
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