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Fabrication of highly conductive polycrystalline films on glass substrates via crystallization of amorphous phase grown by pulsed laser deposition
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10.1063/1.2742310
/content/aip/journal/apl/90/21/10.1063/1.2742310
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2742310
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Figures

Image of FIG. 1.
FIG. 1.

(a) X-ray diffraction (XRD) patterns of as-grown and -annealed films. An XRD pattern of a -annealed pure film is shown in gray. The symbols A and B denote the diffraction peaks of anatase (Ref. 13) and rutile (Ref. 14) structures, respectively. (b) Cross-sectional TEM image of an as-grown film. (c) He Rutherford backscattering spectrometry (RBS) spectra of a TNO film on thermally oxidized silicon wafer. Gray and black lines show experimental and simulated results, respectively.

Image of FIG. 2.
FIG. 2.

(a) Resistivity of pure and films on glass before and after annealing. (b) Four-probe resistivity of an as-grown film measured in situ during heating and subsequent cooling treatments.

Image of FIG. 3.
FIG. 3.

(a) Resistivity, (b) carrier density, and (c) Hall mobility of polycrystalline (solid line) and epitaxial (dashed line) TNO films plotted as a function of temperature.

Image of FIG. 4.
FIG. 4.

(a) Optical transmission and reflection spectra and (b) absorption spectra of as-grown (gray) and annealed (black) films.

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/content/aip/journal/apl/90/21/10.1063/1.2742310
2007-05-22
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of highly conductive Ti1−xNbxO2 polycrystalline films on glass substrates via crystallization of amorphous phase grown by pulsed laser deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2742310
10.1063/1.2742310
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