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Measured dark current of shallow quantum well SB-QWSC grown on DBR (gray) and GaAs (black) substrates. Also shown are the calculated ideality dark current components for the DBR (dotted) and control (dashed).
Measured (empty squares) and modeled (solid line) electroluminescence spectra of shallow quantum well DBR SB-QWSC.
Modeled device efficiency for a 50 well CDBR SB-QWSC at (low-AOD spectrum) concentration in the radiative limit, as a function of the initial layer thicknesses of a DBR chirped at 1% per period. The high efficiency in the lower left (point A) is due to an increase in while the lower right efficiency peak (point B) is due to an increase in .
Reverse saturation currents and series resistances from fits to the measurements and model predictions for .
Calculated , , and efficiency , at concentration (low-AOD spectrum), of a 50 shallow well SB-QWSC grown on a GaAs substrate, a single 20.5 period DBR optimized to increase , a single 20.5 period DBR optimized to increase , and two 10.5 period DBRs, one of which is optimized for and the other for enhancement. All DBRs are chirped at 1% per period. (FF denotes fill factors.)
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