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Ohmic contacts to -type GaN based on TaN, TiN, and ZrN
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10.1063/1.2742572
/content/aip/journal/apl/90/21/10.1063/1.2742572
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2742572
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Specific contact resistance and sheet resistance under the contact of contacts as a function of annealing temperature.

Image of FIG. 2.
FIG. 2.

(Color online) AES depth profiles of contacts (a) as deposited, (b) annealed at , (c) annealed at and aged at until the contacts became non-Ohmic and (d) annealed at .

Image of FIG. 3.
FIG. 3.

(Color online) Specific contact resistance of contacts as a function of aging at .

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/content/aip/journal/apl/90/21/10.1063/1.2742572
2007-05-22
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ohmic contacts to p-type GaN based on TaN, TiN, and ZrN
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2742572
10.1063/1.2742572
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