Full text loading...
Capacitance-voltage hysteresis of nanocrystal memory device after bidirectional sweeps between and . The inset is cross-section TEM micrographs of a stacked structure.
Different memory effects of the single and double layer nanocrystals.
(a) Data retention characteristics of the nanocrystal memory device. (b) The band diagrams nanocrystal memory device in retention.
Band diagrams of “write” and “erase” operations of the double layer nanocrystals with different gate polarities of the memory device.
Article metrics loading...