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Using double layer nanocrystals to improve the memory effects of nonvolatile memory devices
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10.1063/1.2742573
/content/aip/journal/apl/90/21/10.1063/1.2742573
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2742573
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Capacitance-voltage hysteresis of nanocrystal memory device after bidirectional sweeps between and . The inset is cross-section TEM micrographs of a stacked structure.

Image of FIG. 2.
FIG. 2.

Different memory effects of the single and double layer nanocrystals.

Image of FIG. 3.
FIG. 3.

(a) Data retention characteristics of the nanocrystal memory device. (b) The band diagrams nanocrystal memory device in retention.

Image of FIG. 4.
FIG. 4.

Band diagrams of “write” and “erase” operations of the double layer nanocrystals with different gate polarities of the memory device.

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/content/aip/journal/apl/90/21/10.1063/1.2742573
2007-05-22
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2742573
10.1063/1.2742573
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