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Dislocation reduction in GaN with multiple buffer layers by metal organic chemical vapor deposition
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10.1063/1.2742590
/content/aip/journal/apl/90/21/10.1063/1.2742590
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2742590
/content/aip/journal/apl/90/21/10.1063/1.2742590
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/content/aip/journal/apl/90/21/10.1063/1.2742590
2007-05-22
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dislocation reduction in GaN with multiple MgxNy∕GaN buffer layers by metal organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2742590
10.1063/1.2742590
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