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Scanning near-field electron beam induced current microscopy: Application to III-V heterostructures and quantum dots
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10.1063/1.2742638
/content/aip/journal/apl/90/21/10.1063/1.2742638
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2742638
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Topographic (a) AFM image close to an indentation made in the GaAs sample and (b) simultaneously acquired EBIC image for , , and .

Image of FIG. 2.
FIG. 2.

(Color online) Topographic (a) AFM image of QDs covered with a thick GaAs layer and (b) simultaneously acquired EBIC image. The arrows in image (a) indicate the position of small craters (the QDs) in the middle of the ringlike structures.

Image of FIG. 3.
FIG. 3.

Comparison of the normalized induced current for the GaAs sample without QDs and the GaAs sample containing InAs QDs.

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/content/aip/journal/apl/90/21/10.1063/1.2742638
2007-05-22
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scanning near-field electron beam induced current microscopy: Application to III-V heterostructures and quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2742638
10.1063/1.2742638
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