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High mobility bottom gate InGaZnO thin film transistors with etch stopper
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10.1063/1.2742790
/content/aip/journal/apl/90/21/10.1063/1.2742790
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2742790
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic cross section of the IGZO TFTs, which have an inverted staggered bottom gate structure, (a) without and (b) with an etch stopper layer, respectively. (c) TEM bright-field image of the stack of and (d) the selected area diffraction pattern of the IGZO channel layer.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Representative transfer characteristics of an TFT with and an ESL. (b) The output characteristics of the TFT with the ESL.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Dependence of the channel length on the apparent field-effect mobility of the TFTs. (b) The extracted field-effect mobility as a function of channel length and the fitting result considering the : the inset shows the device as a function of at for the TFTs.

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/content/aip/journal/apl/90/21/10.1063/1.2742790
2007-05-24
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2742790
10.1063/1.2742790
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