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Nitride mediated epitaxy of through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
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10.1063/1.2742791
/content/aip/journal/apl/90/21/10.1063/1.2742791
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2742791
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross sectional HR-TEM images of (a) PVD Co film grown at and (b) PE-ALD Co.

Image of FIG. 2.
FIG. 2.

XPS spectrum of PE-ALD Co for silicon core-level region after selective etching of Co film.

Image of FIG. 3.
FIG. 3.

XRD spectra of PE-ALD after RTA at various annealing temperatures.

Image of FIG. 4.
FIG. 4.

Cross sectional HR-TEM images of PE-ALD Co film annealed at .

Image of FIG. 5.
FIG. 5.

XRD scan of PE-ALD annealed at . The capping layer and remaining Co film were selectively etched before analysis.

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/content/aip/journal/apl/90/21/10.1063/1.2742791
2007-05-23
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2742791
10.1063/1.2742791
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