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Kelvin probe force microscopy study of surface potential transients in cleaved high electron mobility transistors
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10.1063/1.2743383
/content/aip/journal/apl/90/21/10.1063/1.2743383
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2743383
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

HEMT structure and a schematic diagram of the KFM measurement system.

Image of FIG. 2.
FIG. 2.

(Color) (a) Cross-sectional potential distribution under and . (b) Cross-sectional potential distribution from after both the gate and the drain voltages were changed to .

Image of FIG. 3.
FIG. 3.

Transients of the potential distribution at three positions indicated in Fig. 2(b).

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/content/aip/journal/apl/90/21/10.1063/1.2743383
2007-05-25
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Kelvin probe force microscopy study of surface potential transients in cleaved AlGaN∕GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2743383
10.1063/1.2743383
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