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Efficient terahertz emission from ballistic transport enhanced superlattice photomixers
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10.1063/1.2743400
/content/aip/journal/apl/90/21/10.1063/1.2743400
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2743400
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Band diagram for one superlattice period. Inset: Reciprocal of the normalized device capacitance with theoretical curve as solid line.

Image of FIG. 2.
FIG. 2.

Terahertz power of a GaAs device normalized to the value at , exhibiting a peak at reverse bias, attributed to ballistic transport. The inset shows the optimum terahertz power on a double logarithmic scale.

Image of FIG. 3.
FIG. 3.

Measurements of a two-period and a four-period InGaAs device with (for both), and , estimated from geometry. A two-period GaAs device with , is also depicted. The solid lines are fits to the experimental data.

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/content/aip/journal/apl/90/21/10.1063/1.2743400
2007-05-25
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Efficient terahertz emission from ballistic transport enhanced n-i-p-n-i-p superlattice photomixers
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/21/10.1063/1.2743400
10.1063/1.2743400
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