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Hole-versus electron-based operations in SiGe nanocrystal nonvolatile memories
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10.1063/1.2741598
/content/aip/journal/apl/90/22/10.1063/1.2741598
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2741598
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Figures

Image of FIG. 1.
FIG. 1.

(a) Relative alignment of band structure of the device compounding materials with the vacuum level before contact. (b) Position-dependent conduction and valence band profile across the memory device after contact. The confinement barriers for electrons and holes in the substrate/oxide (nanocrystal/oxide) interface are and , respectively. All simulations presented throughout this work were performed with a hemispherical NC with of diameter and .

Image of FIG. 2.
FIG. 2.

Gate bias dependence of the (a) programming and (b) erase/retention time of a single carrier in NCs for the following Ge concentrations: 0.0 (solid line), 0.2 (solid circle), 0.4 (solid square), 0.6 (solid triangle), 0.8 (open circle), and 1.0 (open square). and denote the applied gate and flatband voltages. In the case of erase/retention mode of holes, solid (dashed) lines represent heavy (light) holes. The zero-voltage data represent the retention times. The inset graphs depict the band-edge profile under programming and erase modes. The dashed lines in the inset graphs indicate the Fermi level.

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/content/aip/journal/apl/90/22/10.1063/1.2741598
2007-05-30
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hole-versus electron-based operations in SiGe nanocrystal nonvolatile memories
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2741598
10.1063/1.2741598
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