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(a) XPS S and S and (b) Ge spectra of a (100)Ge surface after exposure.
(Color online) (a) RHEED patterns of a (100)Ge surface after exposure, prior to in situ vacuum annealing, and after annealing at (b) 200, (c) 400, and (d) . The arrows indicate the reconstruction spots.
(Color online) [(a)–(d)] Evolution of the atomic configuration of a (100)Ge surface during molecular dissociation of an molecule, observed during molecular dynamics simulations at . The corresponding energy profile of the reaction is shown in (e). (f) Equilibrium configuration after the dissociation of two molecules on the surface.
(a) Calculated total electronic density of states (DOS) of S and passivated Ge surfaces as a function of the electron energy (with respect to the Fermi energy ). (b) Projected electronic density of states of the 3 S orbital of the S and passivated surfaces.
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