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exposure of a (100)Ge surface: Evidences for a electrically passivated surface
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10.1063/1.2743385
/content/aip/journal/apl/90/22/10.1063/1.2743385
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2743385
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) XPS S and S and (b) Ge spectra of a (100)Ge surface after exposure.

Image of FIG. 2.
FIG. 2.

(Color online) (a) RHEED patterns of a (100)Ge surface after exposure, prior to in situ vacuum annealing, and after annealing at (b) 200, (c) 400, and (d) . The arrows indicate the reconstruction spots.

Image of FIG. 3.
FIG. 3.

(Color online) [(a)–(d)] Evolution of the atomic configuration of a (100)Ge surface during molecular dissociation of an molecule, observed during molecular dynamics simulations at . The corresponding energy profile of the reaction is shown in (e). (f) Equilibrium configuration after the dissociation of two molecules on the surface.

Image of FIG. 4.
FIG. 4.

(a) Calculated total electronic density of states (DOS) of S and passivated Ge surfaces as a function of the electron energy (with respect to the Fermi energy ). (b) Projected electronic density of states of the 3 S orbital of the S and passivated surfaces.

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/content/aip/journal/apl/90/22/10.1063/1.2743385
2007-05-30
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: H2S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surface
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2743385
10.1063/1.2743385
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