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(Color online) (a) Low-magnification scanning electron microscopy (SEM) image of the as-synthesized nanowires. Scale bar: . Inset: high-magnification SEM image of a single nanowire. Scale bar: . (b) Low-magnification TEM image of a :Sb nanowire. Scale bar: . Top inset: SAED pattern of the :Sb nanowire, indicating the  growth direction. Bottom inset: HRTEM image the same nanowire. Scale bar: . (c) Comparison of the current-voltage characteristics using four-probe and two-probe configurations for a nanowire device. Inset: SEM image of the device. Scale bar: . (d) Histogram of resistivities measured on 112 nanowire devices.
(Color online) (a) Transfer curve of a nanowire device measured at . Inset: SEM image of the device. Scale bar: . (b) UV response of the same nanowire device. Inset: curve. (c) Dependence of the resistivity on temperature measured in the high-temperature range , showing the expected linear behavior. (d) curve for the same nanowire at large biases. Inset: SEM image of the failed nanowire, showing that failure occurred in the middle of the nanowire. Scale bar: .
(Color online) (a) Field emission current as a function of applied voltage of a lateral nanowire emitter device. Triangle: ; square: . Inset: SEM image of the nanowire emitter device with a gap between the cathode and anode. Scale bar: . (b) Fowler-Nordheim plots of for the curves shown in panel a. The straight lines are least-squares fits using the FN formula.
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