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Surface recombination velocity reduction in type-II superlattice photodiodes due to ammonium sulfide passivation
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10.1063/1.2743905
/content/aip/journal/apl/90/22/10.1063/1.2743905
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2743905
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the EBIC experiment on a junction: the electron beam with energy penetrates the semiconductor surface and generates electron-hole pairs in a volume outlined by the shaded area. In the neutral region, the electrons diffuse (characterized by ) to the depletion region while subjecting to influence from the surface (characterized by ).

Image of FIG. 2.
FIG. 2.

Normalized EBIC scanning profiles of three samples: before passivation, after passivation using method 1, and after passivation using method 2. For each sample, the EBIC profiles taken at two beam energies (6 and ) are shown. The EBIC profiles for at 6 and are almost indiscernible because the SRV is very small.

Image of FIG. 3.
FIG. 3.

Simulated normalized EBIC profiles for various groups of (a) beam energies , (b) electron diffusion lengths , (c) depletion region widths , and (d) electron SRVs . When unspecified, the control group parameters are , , , and .

Image of FIG. 4.
FIG. 4.

The normalized EBIC profiles (symbols) measured at 6 and from (passivation method 2) and compared with simulated EBIC profiles (lines). The SRV value used in the simulation for is . The SRV value used in the simulation for is less than .

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/content/aip/journal/apl/90/22/10.1063/1.2743905
2007-05-29
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface recombination velocity reduction in type-II InAs∕GaSb superlattice photodiodes due to ammonium sulfide passivation
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2743905
10.1063/1.2743905
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