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Schematic diagram of the EBIC experiment on a junction: the electron beam with energy penetrates the semiconductor surface and generates electron-hole pairs in a volume outlined by the shaded area. In the neutral region, the electrons diffuse (characterized by ) to the depletion region while subjecting to influence from the surface (characterized by ).
Normalized EBIC scanning profiles of three samples: before passivation, after passivation using method 1, and after passivation using method 2. For each sample, the EBIC profiles taken at two beam energies (6 and ) are shown. The EBIC profiles for at 6 and are almost indiscernible because the SRV is very small.
Simulated normalized EBIC profiles for various groups of (a) beam energies , (b) electron diffusion lengths , (c) depletion region widths , and (d) electron SRVs . When unspecified, the control group parameters are , , , and .
The normalized EBIC profiles (symbols) measured at 6 and from (passivation method 2) and compared with simulated EBIC profiles (lines). The SRV value used in the simulation for is . The SRV value used in the simulation for is less than .
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