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Interaction of dislocations with vacancies in silicon: Electronic effects
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10.1063/1.2743909
/content/aip/journal/apl/90/22/10.1063/1.2743909
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2743909

Figures

Image of FIG. 1.
FIG. 1.

Core structure of a 90° partial dislocation in (a) SP and (b) DP reconstructions, showing only the atoms present in the glide bylayer. White (gray) circles represent atoms in the top (bottom) sublayer. Vacancies were considered in two SP-core sites (b,q) and in four DP-core sites (n,b,u,p). Light gray shading shows the stacking-fault region.

Image of FIG. 2.
FIG. 2.

Formation energies (in eV) of vacancies at several charge states, in (a) SP- and (b) DP-core sites, as a function of the electronic Fermi level.

Tables

Generic image for table
Table I.

Change in the vacancy formation energy (in eV), with respect to a bulk-site vacancy, for the central core sites of the SP and DP reconstructions, as shown in Fig. 1.

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/content/aip/journal/apl/90/22/10.1063/1.2743909
2007-05-30
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interaction of dislocations with vacancies in silicon: Electronic effects
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2743909
10.1063/1.2743909
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