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Excimer laser irradiation induced suppression of off-state leakage current in organic transistors
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10.1063/1.2743925
/content/aip/journal/apl/90/22/10.1063/1.2743925
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2743925

Figures

Image of FIG. 1.
FIG. 1.

P3HT-based OTFT structure: (a) a glass substrate with patterned ITO electrode functions as a gate, and is the gate dielectric. Photolithographically defined ITO electrode function as source and drain on top of the dielectric. (b) One of the ITO electrodes irradiated with excimer laser and the other shadowed by a metal mask. (c) Laser irradiated and native ITO electrodes denote A and B, respectively. (d) Organic semiconductor, P3HT, ink-jet-printed on top of A and B electrodes and dielectric to complete bottom-contact OTFT fabrication.

Image of FIG. 2.
FIG. 2.

(a) Source-drain current vs drain voltage characteristics of P3HT OTFTs with A electrode as source electrode (close circles) and B electrode as source electrode (open circles) at gate voltages from with voltage step of .

Image of FIG. 3.
FIG. 3.

Source-drain current vs gate voltage at for P3HT OTFTs with A electrode as source electrode (close circles) and B electrode as source electrode (open circles).

Image of FIG. 4.
FIG. 4.

Schematic band diagram for P3HT OTFT with A and B electrodes.

Tables

Generic image for table
Table I.

Device performance of P3HT-OTFTs with various work function source and drain electrodes. A and B electrodes represent the excimer laser irradiated and native ITO electrodes, respectively.

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/content/aip/journal/apl/90/22/10.1063/1.2743925
2007-05-29
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Excimer laser irradiation induced suppression of off-state leakage current in organic transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2743925
10.1063/1.2743925
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