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Nickel nanocrystals with blocking oxide for nonvolatile memory application
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10.1063/1.2743926
/content/aip/journal/apl/90/22/10.1063/1.2743926
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2743926
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-section TEM micrographs of a stacked structure.

Image of FIG. 2.
FIG. 2.

Capacitance-voltage hysteresis of Ni nanocrystal memory device after bidirectional sweeps between and .

Image of FIG. 3.
FIG. 3.

Retention characteristics of the Ni nanocrystal memory device at room temperature.

Image of FIG. 4.
FIG. 4.

Endurance characteristics of the Ni nanocrystal memory device at room temperature.

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/content/aip/journal/apl/90/22/10.1063/1.2743926
2007-05-29
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2743926
10.1063/1.2743926
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