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PL spectra measured at for a number of the freestanding HVPE GaN layers of various thicknesses using an excitation power of (solid lines) and of (dashed lines). The insert shows the FWHM of the line vs the layer thickness.
(a) PL decay curves measured at at the peak position (thin solid lines). The decay fitting is shown by the thick solid line. PL decay curves taken at the energy position of the LO phonon replica for the donor bound exciton are shown by the dashed lines. (b) Extracted PL decay times for the transition is plotted vs the GaN layer thickness.
(a) Power dependence of the recombination lifetimes of the and transitions measured at their peak position is shown for two layers with thickness of 240 and . (b) Temperature dependence of the recombination lifetimes of the and transitions is shown by dots. Lines represent fitting of the recombination lifetime according to , where is a temperature independent constant.
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