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Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy
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10.1063/1.2743950
/content/aip/journal/apl/90/22/10.1063/1.2743950
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2743950
/content/aip/journal/apl/90/22/10.1063/1.2743950
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/content/aip/journal/apl/90/22/10.1063/1.2743950
2007-05-29
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2743950
10.1063/1.2743950
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