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Structural and electrical characteristics of gate dielectrics
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10.1063/1.2744486
/content/aip/journal/apl/90/22/10.1063/1.2744486
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2744486
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD of dielectric films after annealing various temperatures in ambient for .

Image of FIG. 2.
FIG. 2.

XPS results of (a) Er , (b) Ti , and (c) O in films after annealing at various temperatures.

Image of FIG. 3.
FIG. 3.

curves of gate dielectrics annealed at various temperatures. The inset shows the hysteresis phenomenon for MOS capacitors after annealing at .

Image of FIG. 4.
FIG. 4.

Gate current density of gate dielectrics as a function of gate voltage after annealing at different temperatures.

Image of FIG. 5.
FIG. 5.

SILC [, where ] vs stress time for MOS capacitors after annealing at different temperatures.

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/content/aip/journal/apl/90/22/10.1063/1.2744486
2007-05-30
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and electrical characteristics of Er2TiO5 gate dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2744486
10.1063/1.2744486
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