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XRD of dielectric films after annealing various temperatures in ambient for .
XPS results of (a) Er , (b) Ti , and (c) O in films after annealing at various temperatures.
curves of gate dielectrics annealed at various temperatures. The inset shows the hysteresis phenomenon for MOS capacitors after annealing at .
Gate current density of gate dielectrics as a function of gate voltage after annealing at different temperatures.
SILC [, where ] vs stress time for MOS capacitors after annealing at different temperatures.
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