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Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile
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10.1063/1.2745223
/content/aip/journal/apl/90/22/10.1063/1.2745223
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2745223
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) FET schematics. (b) A sketch of the V-shaped electrodes between which the IR scans were taken. (c) The voltage-induced absorption spectrum of one of the FET devices studied. The sharp absorption peaks are the IR-active vibrational modes of P3HT.

Image of FIG. 2.
FIG. 2.

(Color online) Charge density profiles measured by the IR spectromicroscopy in three nominally similar devices. The solid lines are theoretical fits (see text).

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/content/aip/journal/apl/90/22/10.1063/1.2745223
2007-05-31
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2745223
10.1063/1.2745223
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