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Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile
1.S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
11.No significant field dependence of was found experimentally at such temperature (Refs. 5 and 10). The nonlinearity of the contact resistance can still be significant (Ref. 5); however, it has no effect on our contactless measurements.
13.By means of repeated capture and release from shallow traps, charge carriers in our experiment travel a macroscopic distance (almost a millimeter) away from injecting electrodes and the decay of is detected chiefly because we intentionally work with a large-area FET with a non-negligible leakage current.
14.Deep in the current saturation regime [where and are of opposite sign], one cannot treat the problem as one dimensional, and becomes position dependent (see, e.g., Ref. 2). We do not consider this case here.
15.In order to obtain this fit Bürgi et al. (Ref. 5) had to shift all their data by , a significant fraction of the total . They argued that such a shift can be viewed as a way to account for residual carriers. We think that a more consistent approach is in terms of a finite .
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