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Band discontinuity measurements of the wafer bonded heterojunction
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10.1063/1.2745254
/content/aip/journal/apl/90/22/10.1063/1.2745254
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2745254
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Definitions of selected terms for the valence band referred to in this letter. is the valence band, is the equilibrium Fermi level, and are the quasi-Fermi levels, and are the energy differences between the Fermi level and valence band, and are the fractions of the applied voltage supported in each semiconductor, and are the diffusion potentials, is the valence band discontinuity, and is the barrier height. (b) Band alignment of the -type heterojunction. The valence band discontinuity is determined to be , while the conduction band discontinuity is . and are the conduction and valence bands, is the Fermi level, and and are the conduction and valence band discontinuities.

Image of FIG. 2.
FIG. 2.

Plot for a -type sample bonded and annealed in a environment. In region 1 , the current density is limited by series resistance effects. In region 2 , the current density has an exponential relation to the applied voltage. In region 3 , the current density has a weak dependence on the applied voltage.

Image of FIG. 3.
FIG. 3.

Extracted barrier heights for measured devices. The dashed line indicates the average barrier height of .

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/content/aip/journal/apl/90/22/10.1063/1.2745254
2007-05-31
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band discontinuity measurements of the wafer bonded InGaAs∕Si heterojunction
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2745254
10.1063/1.2745254
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