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Organosilane-functionalized wide band gap semiconductor surfaces
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10.1063/1.2745641
/content/aip/journal/apl/90/22/10.1063/1.2745641
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2745641
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

MPTMS-functionalized SiC and GaN surfaces. AFM image of C–SiC before (a) and after (b) functionalization, and GaN before (c) and after (d) functionalization. The right panel shows cross-sectional outline of each AFM image. The scale of the image’s vertical axis is shown on the axis of the plot.

Image of FIG. 2.
FIG. 2.

MPTMS-functionalized surfaces. C (a) and S (b) XPS core-level spectra of C–SiC and Si–SiC, respectively. S (c) and Si (d) XPS core-level spectra of ZnO. S (e) and Si (f) XPS core-level spectra of GaN. (TOA: take-off angle). Clean surface spectra: , clean or hydrolyzed.

Image of FIG. 3.
FIG. 3.

(a) Model of MPTMS reaction on hydroxylated surfaces (e.g., GaN, SiC). P XPS core-level spectra of pTyr-PT linked to MPTMS-functionalized (b) ZnO and (c) GaN surfaces. (d) Model of phosphotyrosine analog (pTyr-PT) linked to MPTMS-functionalized ZnO surface.

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/content/aip/journal/apl/90/22/10.1063/1.2745641
2007-06-01
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Organosilane-functionalized wide band gap semiconductor surfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/22/10.1063/1.2745641
10.1063/1.2745641
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