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AlGaN based tunable hyperspectral detector
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10.1063/1.2746069
/content/aip/journal/apl/90/23/10.1063/1.2746069
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/23/10.1063/1.2746069
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic of the device structure consisting of five layers epitaxially grown over template. (b) Schematic of the energy band diagram of five-layered step barrier structure.

Image of FIG. 2.
FIG. 2.

(Color online) (a) AFM scan of sample A. (b) AFM scan of sample B. range of the AFM scans is .

Image of FIG. 3.
FIG. 3.

Conduction and valence band diagrams for sample B with applied bias and applied bias.

Image of FIG. 4.
FIG. 4.

characteristics for voltage sweep over for samples A and B.

Image of FIG. 5.
FIG. 5.

IPE spectra (quantum yield vs photon energy) at different applied biases. Inset shows variation of potential barrier height, faced by photoexcited carriers, as a function of applied voltage calculated from IPE spectra.

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/content/aip/journal/apl/90/23/10.1063/1.2746069
2007-06-04
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: AlGaN based tunable hyperspectral detector
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/23/10.1063/1.2746069
10.1063/1.2746069
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