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(Color online) (a) Schematic of the device structure consisting of five layers epitaxially grown over template. (b) Schematic of the energy band diagram of five-layered step barrier structure.
(Color online) (a) AFM scan of sample A. (b) AFM scan of sample B. range of the AFM scans is .
Conduction and valence band diagrams for sample B with applied bias and applied bias.
characteristics for voltage sweep over for samples A and B.
IPE spectra (quantum yield vs photon energy) at different applied biases. Inset shows variation of potential barrier height, faced by photoexcited carriers, as a function of applied voltage calculated from IPE spectra.
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