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Very high quantum efficiency in type-II superlattice photodiode with cutoff of
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Spectral response measured at of devices with -region thicknesses ranging from . (a) shows the responsivity, (b) the quantum efficiency, and (c) the specific detectivity. In all three, the absorption at is visible as well as the water vapor absorption between 5 and .

Image of FIG. 2.
FIG. 2.

(Color online) Quantum efficiency as a function of -region thicknesses (circles) and the extrapolation (solid line). The dash line represents the maximum possible QE without antireflective coating, assuming the refractive index of InAs (see Ref. 4).

Image of FIG. 3.
FIG. 3.

(Color online) (a) Current density vs voltage and (b) differential resistance vs voltage at of devices with -region thicknesses ranging from . All and curves exhibit typical band-to-band tunneling behavior.

Image of FIG. 4.
FIG. 4.

(Color online) -product dependence vs band gap energy of all grown structures. The numbers beside the circle indicate device’s -region thickness. is in and is in meV. The inset shows the normalized to 50% cutoff of as a function layer thickness.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Very high quantum efficiency in type-II InAs∕GaSb superlattice photodiode with cutoff of 12μm