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Temperature dependencies of annealing behaviors of quantum wells for long wavelength dilute-nitride lasers
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10.1063/1.2746944
/content/aip/journal/apl/90/23/10.1063/1.2746944
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/23/10.1063/1.2746944
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL intensity vs annealing temperature (ex situ, ) for QW.

Image of FIG. 2.
FIG. 2.

PL intensity vs annealing duration for QW. Degradation gets about four times faster for every increase. The optimum with is roughly two times better than Fig. 1. Note that the PL intensity axis is, albeit arbitrary, consistent among all the figures in this report.

Image of FIG. 3.
FIG. 3.

PL intensity vs annealing duration for QW. Improvement gets about two times faster for every increase.

Image of FIG. 4.
FIG. 4.

PL intensity vs annealing duration for thick, layer. Improvement gets about four times faster for every increase or two times faster for every .

Image of FIG. 5.
FIG. 5.

PL intensity vs annealing duration for thick, QW. Degradation becomes more than three times faster for every increase.

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/content/aip/journal/apl/90/23/10.1063/1.2746944
2007-06-11
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependencies of annealing behaviors of GaInNAsSb∕GaNAs quantum wells for long wavelength dilute-nitride lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/23/10.1063/1.2746944
10.1063/1.2746944
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