1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
High current density heterojunction photocathode with improved photoyield
Rent:
Rent this article for
USD
10.1063/1.2746959
/content/aip/journal/apl/90/23/10.1063/1.2746959
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/23/10.1063/1.2746959
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) As shown in the inset, a size metal grid is lithographically patterned at the center of the GaN substrate to increase the electrical conductivity of the photocathode. After the sample cleaning, we deposit a CsBr film on top of the GaN film. We show a schematic drawing of the cross section view of the photocathode structure (not in scale). The cathode is mounted on a molybdenum sample holder that is kept at room temperature.

Image of FIG. 2.
FIG. 2.

(Color online) We show a photocurrent curve of a photocathode in transmission mode under , laser illumination. The laser spot size is less than . The photoyield increases from zero to larger than (0.4%) in less than . This photoyield is about four times of the maximum photoyield of a cathode. The photoyield decreases with time, it drops below after . Under such a condition, we can operate the CsBr photocathode with more than for at least .

Image of FIG. 3.
FIG. 3.

We show the energy diagram of the heterostructure to explain photoemission photocathode. The electron affinity of the CsBr is reduced after the surface becomes Cs rich under illumination. A possible negative electron affinity can be achieved (Ref. 7). Many photoelectrons generated inside the GaN film are injected into the CsBr film. After activation, the energy barrier at the surface is reduced. More electrons can escape from the surface.

Loading

Article metrics loading...

/content/aip/journal/apl/90/23/10.1063/1.2746959
2007-06-07
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High current density GaN∕CsBr heterojunction photocathode with improved photoyield
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/23/10.1063/1.2746959
10.1063/1.2746959
SEARCH_EXPAND_ITEM