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Realization of highly reproducible ZnO nanowire field effect transistors with -channel depletion and enhancement modes
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10.1063/1.2748096
/content/aip/journal/apl/90/24/10.1063/1.2748096
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/24/10.1063/1.2748096
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) HREM images of ZnO NWs grown on (a) an Au-coated sapphire substrate and (b) an Au-catalyst-free ZnO film. Insets are computed fast Fourier transform patterns (upper) and low magnification TEM images (lower). (c) emission spectra of ZnO NWs on the two substrates showing emissions at approximately . (d) A FESEM image of a single ZnO NW connected between source and drain electrodes in FET device structures (inset).

Image of FIG. 2.
FIG. 2.

(Color online) (a) Output characteristics and (b) transfer characteristics for -channel depletion-mode FET of ZnO NWs grown on an Au-coated sapphire substrate. The inset shows the semilogarithmic plot of the curve at .

Image of FIG. 3.
FIG. 3.

(Color online) (a) Output characteristics and (b) transfer characteristics for -channel enhancement-mode FET of ZnO NWs grown on an Au-catalyst-free ZnO film. The inset shows the semilogarithmic plot of the curve at .

Image of FIG. 4.
FIG. 4.

(Color online) Threshold voltage vs carrier concentration (at ) for all the fabricated ZnO NW-FET devices.

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/content/aip/journal/apl/90/24/10.1063/1.2748096
2007-06-11
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Realization of highly reproducible ZnO nanowire field effect transistors with n-channel depletion and enhancement modes
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/24/10.1063/1.2748096
10.1063/1.2748096
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