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Silicon on insulator for symmetry-converted growth
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10.1063/1.2748099
/content/aip/journal/apl/90/24/10.1063/1.2748099
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/24/10.1063/1.2748099
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the SOI structure used for GaN growth. A thin Si(111) template layer is bonded with a Si(001) substrate via layer, converting the substrate symmetry from square to hexagonal.

Image of FIG. 2.
FIG. 2.

(Color online) STM images of the reconstructed surface on the SOI structure, obtained by the Si deposition cleaning method. Sample bias voltage is set at (inset: ), and scan size is (inset: ).

Image of FIG. 3.
FIG. 3.

(Upper row) Sequential change of RHEED patterns during the growth of GaN films on symmetry-converted SOI, observed with an electron beam parallel to showing (a) the reconstruction of the SOI(111) surface, (b) nucleation of wurtzite GaN, and (c) after film growth. (Lower row) Sequential change of surface reconstruction with the deposition of additional Ga on the GaN film at room temperature observed with an electron beam parallel to , which aligns to . The patterns correspond to -(d) , (e) , and (f) reconstructions with higher intensity in three time streaks, which are all known for the N-polar GaN surface.

Image of FIG. 4.
FIG. 4.

(Color online) STM images of the - (a) and (b) reconstructed surfaces obtained by Ga deposition on the GaN films grown on the SOI structure. Scan size is . Insets are the magnified images . Sample bias voltages are set at (a) (inset: ) and (b) (inset: ). A phase boundary originating from rotated reconstruction is seen in the upper part of the image.

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/content/aip/journal/apl/90/24/10.1063/1.2748099
2007-06-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon on insulator for symmetry-converted growth
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/24/10.1063/1.2748099
10.1063/1.2748099
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