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Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density
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10.1063/1.2748336
/content/aip/journal/apl/90/24/10.1063/1.2748336
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/24/10.1063/1.2748336
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

normalized photoluminescence spectra in GaAsSb, either undoped (thin black line) or carbon doped with (thick black line) or (thick gray line). The normalization factors are indicated for the doped layers since they are meaningful in samples with almost identical structures. The valence band structures of InGaAs (black line) and GaAsSb (gray line) are compared in the inset.

Image of FIG. 2.
FIG. 2.

Some typical room-temperature time-dependent normalized differential transmission measurements recorded either in GaAsSb, carbon doped with , , , and , or in InGaAs with .

Image of FIG. 3.
FIG. 3.

Electron lifetime measured in carbon-doped InGaAs as a function of the hole density (filled triangles). Previous measurements with beryllium doped InGaAs are also shown for comparison (empty triangles) (from Ref. 4). The continuous gray line is a fit with a law, typical of Auger recombinations.

Image of FIG. 4.
FIG. 4.

Electron lifetime measured in carbon-doped GaAsSb as a function of the hole density (filled lozenges), fitted by a law (dashed line). Electron lifetime as deduced by Bolognesi et al. (Ref. 6) is plotted over the exact doping range investigated (thin black line). The electron lifetime vs hole density for InGaAs is shown for direct comparison (thick gray line).

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/content/aip/journal/apl/90/24/10.1063/1.2748336
2007-06-12
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/24/10.1063/1.2748336
10.1063/1.2748336
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