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Room temperature magnetization curves of (a) blank sapphire substrate and (b) and 0.2% Al-doped film, and (c) data after subtracting the diamagnetic contribution from the substrate.
Magnetic moment of films as a function of Al content on R-cut (엯) and C-cut (●) sapphire substrates. ▴ denotes the saturation magnetic moment estimated from the x-ray diffraction measurements. Estimated error is . The inset shows the (002) reflection from metallic Co.
(Color online) (a) Magnetoresistance measured at for various nominal Al concentrations. The inset shows the anisotropy of the magnetoresistance for 0.2% Al measured in field of at . (b) Hall resistance as a function of temperature for the same compositions. The inset illustrates the complete degeneration of the electronic gas at 0.2% Al.
(Color online) Room temperature optical spectra of Co:ZnO films at different Al concentrations. The inset shows reduced data on the band-gap shift due to the Burstein-Moss effect and a fit to it revealing correct power law behavior with .
Properties of pure and doped ZnO thin films grown on C- and R-cut sapphire substrates.
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