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In situ Ni–Si nanowire junction based on substrate sourced growth and its electrical transport behavior
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic illustration for the whole Ni–Si NW junction structure brought into contact with Ni/heavily doped poly-Si electrodes using a substrate sourcing mechanism. The upper figure is a real image of a typical Si NW junction with a gap spacing of . (b) A representative TEM image of an individual Ni–Si nanowire, whose diameter is about . (c) Typical energy dispersive x-ray analysis spectrum of the nanowire shown in (a).

Image of FIG. 2.
FIG. 2.

(a) X-ray diffraction patterns for the as-deposited and annealed Ni/heavily doped poly-Si electrodes, showing the formation of an NiSi phase. (b) A typical SEM image of the wool-like Ni–Si NWs grown on a large area over the Ni/heavily doped poly-Si film by the self-source mechanism. (c) Enlarged image of a robust -poly-Si electrode junction. (d) In-depth elemental mapping of Ni, Si, O, and C atoms for an individual -poly-Si junction.

Image of FIG. 3.
FIG. 3.

SEM image of the tested junction with gap spacing of . (b) Gate bias dependence of the channel current, indicating nearly metallic nature. [(c) and (d)] temperature dependent current vs bias characteristics in the low and high bias regimes, respectively.

Image of FIG. 4.
FIG. 4.

(Color online) Conductance and differential conductance of the junction. (a) Log (channel conductance) (temperature) (K) plot in the regime of low bias. The plot shows a linear slope. (b) Bias dependent curves measured at different temperatures. The curve on the log-log scale was fitted with a straight line to indicate power law behavior. (c) A replot made using universal scaling relations:.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ Ni–Si nanowire junction based on substrate sourced growth and its electrical transport behavior