Full text loading...
(Color online) (a) Transfer characteristics of the 4 and 50 ML CoPc thin-film devices measured at and sweeps at /step at rate of . (b). X-ray diffraction for a 4 ML CoPc thin film grown on a substrate. The line is a fit using a quantitative refinement program. The inset shows the AFM image with a color scale range over .
(Color online) Chemical response to ethyl acetate (EA), toluene (TE), diisopropyl methylphosphonate (DIMP), nitrobenzene (NB), and methanol (MeOH) for 4 and 50 ML devices measured at and . The broken lines represent two separate runs.
(Color online) Electronic band models of thick and thin ChemFETs with a negative gate bias. Holes accumulate at the interface by gate biasing and at the air/CoPc interface by oxygen doping. The broken lines represent trap states in the organic film.
Average chemical sensitivity in , drift in %/h, and response time in second of 4 and 50 ML devices to the vapor doses are extracted from Fig. 2. Note that the analytes are presented in order of sensitivity. The standard errors estimated from five pulses for each analyte are shown in parentheses. Drift below 0.05%/h is listed as nonsignificant (NS).
Article metrics loading...