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Ambipolar field-effect transistor based on organic-inorganic hybrid structure
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10.1063/1.2752023
/content/aip/journal/apl/90/26/10.1063/1.2752023
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/26/10.1063/1.2752023
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Output characteristics of indium zinc oxide FET, (b) pentacene FET, and [(c) and (d)] FET based on indium zinc oxide/pentacene heterostructure, respectively. (c) and (d) have -type and -type operations. Inset: illustration of (b) single and (d) double layer FETs based on organic-inorganic heterostructure. Indium zinc oxide and pentacene layers were and thick. Channel length and channel width were and .

Image of FIG. 2.
FIG. 2.

(Color online) Transfer characteristics of FET based on indium zinc oxide/pentacene heterostructure during (a) -type and (b) -type operations. (c) Illustration of - and -channel formations during negative and positive and .

Image of FIG. 3.
FIG. 3.

(Color online) (a) Output characteristics, (b) transfer characteristics, and (c) external EL quantum efficiency vs characteristics of FET based on indium zinc oxide/pentacene heterostructure. (d) EL spectrum of hybrid FET with PL spectrum of tetracene layer.

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/content/aip/journal/apl/90/26/10.1063/1.2752023
2007-06-26
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ambipolar field-effect transistor based on organic-inorganic hybrid structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/26/10.1063/1.2752023
10.1063/1.2752023
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